High Power GaN-HEMT for Wireless Base Station Applications(Compound Semiconductor Devices,<Special Section>Fundamental and Application of Advanced Semiconductor Devices)

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概要

• 論文の詳細を見る

• Highly reliable GaN high electron mobility transistors (HEMTs) are demonstrated for 3G-wireless base station applications. A state-of-the-art 250-W AlGaN/GaN-HEMTs push-pull transmitter amplifier operated at a drain bias voltage of 50V is addressed with high efficiency under W-CDMA signals. The amplifier, combined with a digital pre-distortion (DPD) system, also achieved an adjacent channel leakage power ratio (ACLR) of less than -50dBc for 4-carrier W-CDMA signals. Memory effect and temperature characteristics are also discussed. A stable operation including gate leakage current under RF stress testing for 1000h is demonstrated at a drain bias voltage of 60V. AlGaN/GaN HEMTs on an n-type doped 3-inch SiC substrate is introduced towards low cost manufacturing for the first time.

• 社団法人電子情報通信学会の論文
• 2006-05-01

著者

• Joshin Kazukiyo

  Compound Semiconductor Devices Laboratory Fujitsu Laboratories Ltd.

• KIKKAWA Toshihide

  Compound Semiconductor Devices Laboratory, Fujitsu Laboratories Ltd.

• Kikkawa Toshihide

  Compound Semiconductor Devices Laboratory Fujitsu Laboratories Ltd.

関連論文

• High Power GaN-HEMT for Wireless Base Station Applications(Compound Semiconductor Devices,Fundamental and Application of Advanced Semiconductor Devices)
• Harmonic Feedback Circuit Effects on Intermodulation Products and Adjacent Channel Leakage Power in HBT Power Amplifier for 1.95GHz Wide-Band CDMA Cellular Phones (Special Issue on Low Distortion Technology for Microwave Devices and Circuits)

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