High Efficient MMIC High Power Amplifier for Ku Band Satellite Communications

概要

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This paper presents a driver amplifier and two high power amplifiers applicable to transmitter blocks of Ku band earth terminals with high efficiency and high power. They are designed with an integrated gate bias circuit for easy integration due to single dc supply point and reliable performances with respect to the threshold voltage and temperature variation. To achieve low cost, these monolithic microwave integrated (MMIC) amplifiers are fabricated in a 4-mil thick substrate using commercial 0.5μm GaAs pHEMT technology. The measurements of the fabricated driver amplifier have shown a typical output power of 30.5dBm and a power added efficiency (PAE) of 37% over 13.5 to 15.0GHz that are enough to drive a high power amplifier. The two fabricated high gain power amplifiers exhibit a maximum saturated output power of 39.2dBm and PAE of 22.7% at 14.5GHz. Measurements confirm the improvement of output power performances of the MMIC amplifiers using integrated gate bias circuit with respect to the temperature conditions.
2009-10-22