P2-22 PIEZOELECTRIC PHOTOTHERMAL AND PHOTO-REFEECTANCE SPECTRA OF InGaN GROWN BY RADIO FREQUENCY-MOLECULAR BEAM EPITAXY(Short oral presentation for posters)

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概要

• 論文の詳細を見る

• Piezoelectric Photothermal Spectroscopy (PPTS) measurements have been carried out on InGaN (In=0〜0.32) thin films grown by radio frequency molecular beam epitaxy. We found that the band energy shifts to the lower energy side (Red shift) by the increase of In composition from 0 to 0.32. For the samples with lower In composition, we could observe the exciton contribution and the obtained binding energy was estimated to be 30 meV (In=0.01). Since, the usual photo-reflectance (PR) spectroscopy could not observed the signals for the samples of higher In composition, the usefulness of the present PPTS methodology is concluded.

• 超音波エレクトロニクスの基礎と応用に関するシンポジウム運営委員会の論文
• 2005-11-16

著者

• Onabe K.

  Graduate School Of Frontier Sciences The University Of Tokyo

• Kawano E.

  Faculty of Engineering, University of Miyazaki

• Uchibori Y.

  Faculty of Engineering, University of Miyazaki

• Shimohara T.

  Faculty of Engineering, University of Miyazaki

• Komaki H.

  Faculty of Engineering, University of Miyazaki

• Katayama R.

  Graduate School of Frontier Sciences, The University of Tokyo

• Fukuyama A.

  Faculty of Engineering, University of Miyazaki

• Ikari T.

  Faculty of Engineering, University of Miyazaki

• Uchibori Y.

  Faculty Of Engineering University Of Miyazaki

• Shimohara T.

  Faculty Of Engineering University Of Miyazaki

• Ikari T.

  Faculty Of Engineering University Of Miyazaki

関連論文

• P2-22 PIEZOELECTRIC PHOTOTHERMAL AND PHOTO-REFEECTANCE SPECTRA OF InGaN GROWN BY RADIO FREQUENCY-MOLECULAR BEAM EPITAXY(Short oral presentation for posters)

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