シリコン単結晶上のチタン・タングステン薄膜の赤外特性
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概要
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Fron the measurements of infrared transmittance and reflectance for titanium tungsten films on silicon substrate, index of refraction, infrared absorption coefficient and electrical conductivity were decided. The changes of refractive index is not strong on the thickness of titanium tugsten films at 3 μm of wavelength, but at 6μm the remarkable changes is obserbed. The difference is explained by more tight corelation between the incident photons and electrons in the film. Electrical conductivities were decreased at thinner film. The reason of the thickness dependence is that conduction electrons were scattered by both sides. Much more change at longer wavelength supports above the hypothesis.
- 福山大学の論文