招待講演 Metrology of microscopic properties of graphene on SiC (Silicon devices and materials)
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概要
- 論文の詳細を見る
Graphene has recently attracted a lot of research interest because of its superior electric properties. Thermally grown epitaxial graphene on SiC substrate is promising for future electronic devices because of its compatibility with existing wafer-scale manufacturing. In this paper, microscopic metrological methods for graphene on SiC will be discussed. A layer number determination method using low-energy electron microscopy (LEEM) enables us to control the layer number and morphology of few-layer graphene. Local conductance measurements using an integrated nanogap probe based on scanning probe microscopy reveal the electrical properties of graphene nanoislands and double-layer graphene sheets on SiC.
- 2009-06-17
著者
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Yamaguchi H
Ntt Basic Res. Lab. Kanagawa Jpn
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Hibino H.
Ntt Basic Research Labs. Nippon Telegraph And Telephone Corp.
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Nagase M.
NTT Basic Research Labs., Nippon Telegraph and Telephone Corp.
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Kageshima H.
NTT Basic Research Labs., Nippon Telegraph and Telephone Corp.
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Kageshima H.
Ntt Basic Research Labs. Nippon Telegraph And Telephone Corp.
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Nagase M.
Ntt Basic Research Labs. Nippon Telegraph And Telephone Corp.
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Hibino H.
Ntt Basic Research Laboratories Ntt Corporation
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Nagase M.
Ntt Basic Research Laboratories
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