Architecture and verification of the row chain cell array for polymer random access memory
スポンサーリンク
概要
- 論文の詳細を見る
A polymer memory, that is considered as one of the next-generation nonvolatile memories, has various excellent electrical and mechanical properties such as small cell feature sizes, high density integrations, and mass-producibility. Although the polymer memories have important advantages for reliability, the peripheral circuits of the polymer memories have not been studied yet, thereby not many research articles available. In this paper, we analyzed and simulate the row chain cell array structure as cross-point cell scheme and demonstrated its ability to correctly read data and reduce noise between cells. Also we using the CMOS 0.35μm process, we verified and simulated with test result for the row chain cell array.
- 社団法人電子情報通信学会の論文
- 2009-06-17
著者
-
Lee S.
Electronics And Computer Engineering Hanyang University
-
Kim J.
Electronics And Computer Engineering Hanyang University
-
Ahn C.
Electronics and Computer Engineering, Hanyang University
-
Ahn C.
Electronics And Computer Engineering Hanyang University
関連論文
- Architecture and verification of the row chain cell array for polymer random access memory
- Architecture and verification of the row chain cell array for polymer random access memory
- Study of Quasi-Two Dimensional Hole Gas Si/Si_xGe_/Si Quantum Wells