A V-band Injection-Locked Frequency Divider with Low Supply Voltage in 0.13-μm Si RFCMOS Technology

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概要

• 論文の詳細を見る

• In this work, a divide-by-2 injection locked frequency divider (ILFD) operating in the V-band with a low V_<DD> has been developed in a commercial 0.13-μm Si RFCMOS technology. The bias current path was separated from the injection signal path, which enabled a supply voltage as low as 0.5V. All inductors and interconnection lines were designed based on EM (electromagnetic) simulator for precise prediction of circuit performance. With varactor tuning voltage ranged for 0〜1.2V, the free-running oscillation frequency varied from 27.43 to 28.06GHz. At 0dBm input power, the frequency divider exhibited a locking range of 5.8GHz from 53 to 58.8GHz without external tuning mechanism. The fabricated circuit size is 0.72mm×0.62mm including the RF and DC supply pads.

• 社団法人電子情報通信学会の論文
• 2009-06-17

著者

• Rieh Jae‐sung

  Korea Univ. Seoul Kor

• Rieh Jae-sung

  Electronics And Computer Engineering Korea University

• Seo Seung-woo

  Electronics And Computer Engineering Korea University

関連論文

• A V-band Injection-Locked Frequency Divider with Low Supply Voltage in 0.13-μm Si RFCMOS Technology
• A V-band Injection-Locked Frequency Divider with Low Supply Voltage in 0.13-μm Si RFCMOS Technology

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