19aB07 Samarium doped bismuth titanate thin film by pulse-laser-ablated method(NCCG-35)
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概要
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Samarium doped bismuth titanate thin films with different orientations were fabricated by pulse-laser-ablated method. A ferroelectric random access memory (FeRAM) with a structure of Au/Sm:BTO/Pt(111)/Ti/SiO2/Si(100) was fabricated to assess the ferroelectric performance of these different orientated Sm:BTO films.
- 日本結晶成長学会の論文
- 2005-08-17
著者
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CHENG Zhenxiang
物質・材料研究機構材料研究所
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Kimura H
物質・材料研究機構
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OZAWA Kiyoshi
National Institute for Materials Science (NIMS)
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Ozawa Kiyoshi
物質・材料研究機構
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Cheng Zhenxiang
物質・材料研究機構
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Kimura Hideo
物質・材料研究機構
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Kannan C.V.
物質・材料研究機構
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Miyazaki Akimitsu
物質・材料研究機構
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