A proposal for highly transparent chalcogenide alloys for thin-film-solar-cell applications (電子デバイス)

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概要

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• Gallium-Indium-sulfide-oxide thin films were deposited onto F-doped SnO_2-coated glass by electrochemical deposition from an aqueous bath. The films were deposited at three different ratios of gallium to indium in the precursor bath; namely [Ga/In]=2/8, 5/5 and 8/2. The impact of the gallium content on the composition, optical transmission, structure, photosensitivity and morphology of the deposited films was investigated. The films deposited at [Ga/In]=5/5 and 8/2 had energy gap as high as 3.5eV. The X-ray diffraction spectrum of the film deposited at [Ga/In]=2/8 contained weak peaks of indium metal, but the In peaks were absent in the spectra of the films deposited at [Ga/In]=5/5 and 8/2. The photosensitivity of the film was observed by means of photoelectrochemical measurements, which confirmed that all the films showed n-type conduction.

• 一般社団法人電子情報通信学会の論文
• 2009-05-07

著者

• Ichimura M.

  Nagoya Inst. Of Technol. Nagoya Jpn

• Haleem M.

  Nagoya Institute of Technology

関連論文

• Electrochemical deposition of InSx thin film by periodic pulse-form biasing and its characterization (シリコン材料・デバイス)
• A proposal for highly transparent chalcogenide alloys for thin-film-solar-cell applications (電子部品・材料)
• A proposal for highly transparent chalcogenide alloys for thin-film-solar-cell applications (電子デバイス)

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