高電圧半導体モジュール樹脂ケースの汚損耐電圧特性の研究

概要

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The purpose of this study is to clarify insulation characteristics of contaminated resin case for high-voltagesemiconductor modules under dc voltage. Also this study plans to develop a novel design of resin case which has higher insulation performance. 3 kinds of model are prepared for the test made of PBT and PPS resin. The tests were carried out under the conditions of 50℃ and 80%RH. We found out that the design now used for 1700V IGBT maintain enough dielectric strength for 30 years under 0.06mg/cm(2) contamination. We also evaluated new case models and they showed little improvement
津山工業高等専門学校の論文