Preparation of AgInS(2) Thin Films by Sulfurization of Ag/In Precursors

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概要

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• This paper describes preparation of AgInS(2) thin films as an absorption layer material for a top cell oftandem solar cells. The film has been prepared by sulfurization of evaporated Ag/In metal precursors.Ag/In ratios in the films were controlled by changing Ag/In ratios in the vacuum chamber. The annealing temperature of 300℃ was found to be appropriate for sulfurization in our case.

• 津山工業高等専門学校の論文

著者

• Okamoto Dai

  津山工業高等専門学校

• Nakamura Shigeyuki

  津山工業高等専門学校

関連論文

• Preparation of AgInS(2) Thin Films by Sulfurization of Ag/In Precursors

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