Floating gate super multi level NAND flash memory for 30nm and beyond (シリコン材料・デバイス・IEDM特集(先端CMOSデバイス・プロセス技術))

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概要

• 論文の詳細を見る

• A floating gate NAND flash memory technology for 30nm and beyond has been successfully developed. The channel length of the cell is 30nm and the channel width of the cell is 25nm. Wide program and erase windows, small variation of WL resistance and Vt, good sub-threshold slope of Id-Vg curve, tight multi Vt distribution, and good reliability, such as program disturbance, endurance and data retention are successfully demonstrated, which are essential to realize Super MLC.

• 2009-01-19

著者

• Hemink G.

  Sandisk Corporation

• Sato A.

  Toshiba Corporation

• Lai C.h.

  Sandisk Corporation

• Kamigaichi T.

  Toshiba Corporation

• Arai F.

  Toshiba Corporation

• Nitta H.

  Toshiba Corporation

• Endo M.

  Toshiba Corporation

• Nishihara K.

  Toshiba Corporation

• Murata T.

  Toshiba Corporation

• Takekida H.

  Toshiba Corporation

• Izumi T.

  Toshiba Corporation

• Uchida K.

  Toshiba Corporation

• Maruyama T.

  Toshiba Corporation

• Kawabata I.

  Toshiba Corporation

• Suyama Y.

  Toshiba Corporation

• Ueno K.

  Toshiba Corporation

• Takeshita H.

  Toshiba Corporation

• Joko Y.

  Toshiba Corporation

• Watanabe S.

  Toshiba Corporation

• Liu Y.

  Toshiba Corporation

• Meguro H.

  Toshiba Corporation

• Kajita A.

  Toshiba Corporation

• Ozawa Y.

  Toshiba Corporation

• Watanabe T.

  Toshiba Corporation

• Sato S.

  SanDisk Corporation

• Tomiie H.

  SanDisk Corporation

• Kanamaru Y.

  SanDisk Corporation

• Shoji R.

  SanDisk Corporation

• Nakamichi M.

  SanDisk Corporation

• Oowada K.

  SanDisk Corporation

• Ishigaki T.

  SanDisk Corporation

• Dutta D.

  SanDisk Corporation

• Dong Y.

  SanDisk Corporation

• Chen C.

  SanDisk Corporation

• Liang G.

  SanDisk Corporation

• Higashitani M.

  SanDisk Corporation

• Lutze J.

  SanDisk Corporation

関連論文

• Floating gate super multi level NAND flash memory for 30nm and beyond (シリコン材料・デバイス・IEDM特集(先端CMOSデバイス・プロセス技術))
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