パワー半導体用中性子照射シリコン : 世界の照射炉の現状と日本原子力研究開発機構の取組み状況(パワーエレクトロニクス及び半導体電力変換一般)

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This review is described a history and a basis of Neutron-Transmutation-Doped Silicon (NTD-Si), which has an advantage of homogeneous doping in the silicon crystal. Today, the market of NTD-Si is growing, because the market of the Insulated Gate Bipolar Transistor (IGBT) as an important device to realize energy-saving society is widespread. Irradiation for large diameter ingot is difficult for lacking of uniformity of neutron distribution. We propose a new irradiation method to break down the defect of neutron self-shielding, and our future plan of increasing of NTD-Si is shown in this report.
2008-10-16