Magnetic and magneto-dielectric properties of magneto-electric field effect capacitor using Cr_2O_3
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概要
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We investigated the magnetic and dielectric properties of a metal (Pt)/insulator (Cr_2O_3)/magnetic floating gate (Fe)/tunnel layer (CeO_2)/semiconductor (Si) capacitor. This capacitor shows capacitance-voltage (C-V) properties typical of a Si Metal-Insulator-Semiconductor (MIS) capacitor with hysteresis, which indicates that electrons have been injected into the Fe layer. The capacitor also shows ferromagnetic properties. The C-V curve has a hysteresis window with a clockwise trace. This hysteresis behavior was changed by the application of an external magnetic field. These results indicate that this MIS capacitor contains a ferromagnetic floating gate and a magneto-electric insulating layer in a single system.
- 社団法人日本セラミックス協会の論文
- 2008-11-01
著者
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Yokota Takeshi
Nagoya Institute Of Technology
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GOMI Manabu
Nagoya Institute of Technology
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YOKOTA Takeshi
Materials Science and Engineering, Nagoya Institute of Technology
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MURATA Shotaro
Materials Science and Engineering, Nagoya Institute of Technology
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GOMI Manabu
Materials Science and Engineering, Nagoya Institute of Technology
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KURIBAYASHI Takaaki
Materials Science and Engineering, Nagoya Institute of Technology
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Murata Shotaro
Materials Science And Engineering Nagoya Institute Of Technology
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Kuribayashi Takaaki
Materials Science And Engineering Nagoya Institute Of Technology
関連論文
- Effect of Electron Injection at the Pt-interface on a Bipolar Resistance Switching Device with Ta/Pr_Ca_MnO_3/Pt Structure
- Electric field-induced resistance changes at low temperature on a Cr_2O_3/ultra-thin (La, Sr)MnO_3 magnetic hetero structure
- Magnetic and magneto-dielectric properties of magneto-electric field effect capacitor using Cr_2O_3
- Enhancement of Switching Capability on Bipolar Resistance Switching Device with Ta/Pr_Ca_MnO_3/Pt Structure
- Origin of Negative Differential Resistance Observed on Bipolar Resistance Switching Device with Ti/Pr_Ca_MnO_3/Pt Structure