Performance Prediction of Deep Sub-nH Inductors for Millimeter-Wave Applications(Session7: Millimeter-wave and Terahertz Devices)

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概要

• 論文の詳細を見る

• With the rapidly growing millimeter-wave applications of today, inductors with very small size become increasingly important. In this work, various inductors with inductance values near deep sub-nH (<〜0.25nH) range were fabricated in a conventional 0.13μm RFCMOS technology, and consequently characterized and modeled. As it is difficult to obtain precise measurement data for devices with such a small size, especially at high frequency region, EM simulation becomes a critical tool to estimate their performance. EM simulation results from various EM tools were compared with the measurement. In addition, performance predictions were made for various dimensions of inductors based on the results.

• 社団法人電子情報通信学会の論文
• 2008-07-02

著者

• Rieh Jae-Sung

  School of Electrical Engineering, Korea University

• Rieh Jae-sung

  School Of Electrical Engineering Korea University

• KIM Sooyeon

  School of Electrical Engineering, Korea University

• OH Yongho

  School of Electrical Engineering, Korea University

• Oh Yongho

  School Of Electrical Engineering Korea University

• Kim Sooyeon

  School Of Electrical Engineering Korea University

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• A V-band Common-Source Low Noise Amplifier in a 0.13 μm RFCMOS Technology(Session 8B : High Speed and High Frequency Applications 2)
• A Low Power V-Band Injection-Locked Frequency Divider in 0.13-μm Si RFCMOS Technology
• Performance Prediction of Deep Sub-nH Inductors for Millimeter-Wave Applications(Session7: Millimeter-wave and Terahertz Devices)
• Performance Prediction of Deep Sub-nH Inductors for Millimeter-Wave Applications(Session7: Millimeter-wave and Terahertz Devices)

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