Emission of terahertz radiation from InGaP/InGaAs/GaAs grating-bicoupled plasmon-resonant nano-transistors(Session7: Millimeter-wave and Terahertz Devices)

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概要

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• This paper reviews recent advances in emission of terahertz radiation from our original dual-grating gate high-electron mobility transistor (HEMT)-based nano-transistors originated from two-dimensional plasmons. The dual grating gates can alternately modulate the 2D electron densities to periodically distribute the plasmonic cavities along the channel, acting as an antenna. The device can emit broadband terahertz radiation even at room temperature from self-oscillating 2D plasmons under the DC-biased conditions. The first sample was fabricated with standard GaAs-based heterostructure material systems, succeeding in room-temperature terahertz emission. The second sample was fabricated in a double-decked HEMT structure in which the grating-gate metal layer was replaced with the semiconducting upper-deck 2D electron layer, resulting in enhancement of emission by one order of magnitude.

• 2008-07-02

著者

• OTSUJI Taiichi

  RIEC

• Otsuji Taiichi

  Riec:research Institute Of Electrical Communication Tohoku University

関連論文

• Emission of terahertz radiation from InGaP/InGaAs/GaAs grating-bicoupled plasmon-resonant nano-transistors(Session7: Millimeter-wave and Terahertz Devices)
• Emission of terahertz radiation from InGaP/InGaAs/GaAs grating-bicoupled plasmon-resonant nano-transistors(Session7: Millimeter-wave and Terahertz Devices)

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