Fabrication of silicon nanowire devices using AC dielectrophoresis(Session5B: Emerging Devices III)

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概要

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• We report the fabrication and characterization of silicon nanowire devices utilizing AC dielectrophoresis. Silicon nanowires synthesized by a vapor-liquid-solid process were aligned between a pair of electrodes by the dielectrophoretic force which induced the silicon nanowires toward the gap where the electric field gradient was maximum. After capturing the silicon nanowires in between the electrodes, a layer of NiCr was deposited on top of contact region using electron-beam lithography and liftoff. The current-voltage characteristics measured from various nanowires with different lengths, diameters, and doping concentrations were measured and analyzed.

• 社団法人電子情報通信学会の論文
• 2008-07-02

著者

• Kang Myung-gil

  Research Center For Time-domain Nano-functional Devices & School Of Electrical Engineering Korea

• HONG Su-Heon

  Research Center for Time-domain Nano-functional Devices & School of Electrical Engineering, Korea Un

• WHANG Dong-Mok

  Research Center for Time-domain Nano-functional Devices & Department of Material Science Eng., Sungk

• HWANG Sung-Woo

  Research Center for Time-domain Nano-functional Devices & School of Electrical Engineering, Korea Un

• Whang Dong-mok

  Research Center For Time-domain Nano-functional Devices & Department Of Material Science Eng. Su

• Hong Su-heon

  Research Center For Time-domain Nano-functional Devices & School Of Electrical Engineering Korea

関連論文

• Fabrication of silicon nanowire devices using AC dielectrophoresis(Session5B: Emerging Devices III)
• Fabrication of silicon nanowire devices using AC dielectrophoresis(Session5B: Emerging Devices III)

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