Nature of dark-brown SnO_2 films prepared by a chemical vapor deposition method

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We recently found dark-brown SnO_2 films were formed in a chemical vapor deposition process under a limited oxygen supplying condition and the nature was investigated in this work. Those films were deposited from SnCl_2 at 350-600℃ in a tubular furnace. The films had the rutile-type structure with the significant preferred-orientation along <100> normal to the substrate surface. Thermogravimetric and elemental analyses revealed that the oxygen deficiency (Vo) and Cl contamination occurred in the films. An as-deposited film at 350℃ contained Vo of 1.5×10^<21>cm^<-3>, which corresponded to that about 2.5% was vacant in the O site. On the other hand, Cl was contained at 7.4×10^<20>cm^<-3> in the 350℃-prepared film. The Cl concentration decreased with deposition temperature and became 1.8×10^<20>cm^<-3> at 600℃. The films showed moderate electric-conductivity and the film deposited at 500℃ had the lowest resistivity of 2.5×10^<-2>Ωcm, where the carrier density and the Hall mobility were 1.3×10^<20>cm^<-3> and 2.0cm^2 V^<-1>s^<-1>, respectively.
社団法人日本セラミックス協会の論文
2008-09-01