A-15 Oxidation Mechanisms of Reaction-Bonded Silicon Nitride(Session: Ceramics III)

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概要

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• The oxidation behavior of porous reaction-bonded silicon nitride has been investigated in the temperature range 900-1400℃ for up to 3 hours by the Simultaneous Thermal Analysis technique. The mechanism of oxidation is complex and depends critically on the temperature. At low temperatures in excess oxygen, a protective silica film is formed by passive oxidation. The low P_<o2> in pores beneath the film leads to active oxidation of both the silicon nitride and silicon oxynitride which may be formed during fabrication process. A model for the roles of the silica film and the silicon oxynitride was proposed and discussed.

• 一般社団法人日本機械学会の論文
• 2006-11-08

著者

• SUJIROTE Kuljira

  National Metal and Materials Technology Center

• Dateraksa Kannigar

  National Metal and Materials Technology Center

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• 大気炉および窒素雰囲気炉で焼結したSi_3N_4セラミックスの特性比較
• A-15 Oxidation Mechanisms of Reaction-Bonded Silicon Nitride(Session: Ceramics III)

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