Effects of adding Y_2O_3 on the electrical resistivity of aluminum nitride ceramics

概要

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Electrical resistivity of AIN ceramics was examined with various amounts of Y_2O_3 within 0 to 4.8 mass%. The electrical resistivity at room temperature varied from 10^<16> to 10^<10> Ω・cm with different Y_2O_3 amounts and at sintering temperatures. In the typical samples sintered at 1900℃, a smaller amount of Y_2O_3 addition with 0.1 to 0.5 mass% gives the lowest electrical resistivity of 10^<10> Ω・cm, whereas the higher amount of Y_2O_3 maintains high resistivity of more than 10^<13> Ω・cm. The results derived from different analytical techniques such as impedance analysis, cathodoluminescence spectrum and microstructural analysis explain the importance of the oxygen concentration in the A1N grain for the electrical resistivity of A1N ceramics.
社団法人日本セラミックス協会の論文
2008-04-01