Analysis of Strained Island Energetics in Ge/Si(001) Growth(Condensed matter : structure and mechanical and thermal properties)

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概要

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• The numerical calculation for Ge/Si(001) heteroepitaxial growth is performed. We adopt the most widely used Stillinger-Weber potential, and the island energies of the three types, two-dimensional island, pyramid and dome, are explored as a function of the lateral size. These island energies are compared with each other to find the island morphology which has the lowest energy. Then, a growth history of the most stable growth mode is searched. Although the result reproduces qualitatively the Stranski-Krastanov growth as observed in the experiments, quantitative differences between our result and experiments in the critical wet layer thickness and the island morphology are found.

• 社団法人日本物理学会の論文
• 2008-05-15

著者

• Kitamura Shinya

  Department Of Applied Physics Tohoku University

関連論文

• Analysis of Strained Island Energetics in Ge/Si(001) Growth(Condensed matter : structure and mechanical and thermal properties)
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