InP系ヘテロ接合バイポーラトランジスタ技術を用いた100Gbit/s級光伝送用集積回路
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概要
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This paper describes novel InP-based heterojunction bipolar transistor (HBT) technologies and circuit design techniques for small-scale-integration (SSI) for 100-Gbit/s-class optical communications systems. The circuits include a sub-4-ps emitter-coupled logic (ECL) gate, 100-Gbit/s selector circuit, and 90-Gbit/s decision circuit. It is demonstrated that InP-based HBT technologies and proposed circuit design techniques are attractive for fabricating ultrahigh-speed SSI circuits with data rates approaching 100Gbit/s.
- 中部大学の論文