Further Studies on Dislocations in Ferroelectric GASH Crystal

元データ お茶の水女子大学

概要

Dislocation etch pits on α- or b-face of ferroelectric GASH crystal was studied. Spacial distribution of dislocation lines in GASH crystals was studied by continuous observation of dissolution process of α- or b-face and c-face. Dislocation which makes very small angle with c-plane causes a pit that accompanies a "wave front" of dissolution. Electron microscopic study of the pit was made and mechanism of etch pit formation is discussed.

著者

大井 喜久夫 早大理工
中村 輝太郎 東大物性研
中村 輝太郎 Department of Physics, Faculty of Science, Ochanomizu University
大井 喜久夫 Department of Physics, Faculty of Science, Ochanomizu University

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