ECR Plasma in CH_4/H_2 Gas Mixture And Film Deposition(Surface Processing)

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概要

• 論文の詳細を見る

• An ECR plasma in CH_4/H_2 gas mixture was studied experimentally in comparison with the hydrogen plasma reported previously. Formation of a-C: H films was also performed in a gas pressure range of 7×10^<-1> to 15Pa. Efficient film formation was achieved near the resonance region and a good correlation between optical emission and the film deposition rate was verified. The infrared absorption and electron spin resonance characteristics of prepared films indicated that their compounds wer governed by sp^3 structures of CH_n (n=1 to 3) radicals.

• 大阪大学の論文

著者

• Ariyasu T.

  Kansai University

• MIYAKE S.

  Osaka University

• CHEN W.

  Osaka University

• WATANABE N.

  Osaka University

関連論文

• ECR Plasma in CH_4/H_2 Gas Mixture And Film Deposition(Surface Processing)
• Energy Spectrum of Primary Cosmic Rays

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