Interfacial Structure and Reaction Mechanism of SiC/V Joints(Materials, Metallurgy & Weldability)

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概要

• 論文の詳細を見る

• SiC was bonded to SiC using V foil at temperatures ranging from 1473K to 1673K for 1.8 to 64.8ks and 30MPa in vacuum. Interfacial reactions and microstructures were investigated using or electron probe microanalyser and X-ray diffractometer. SiC begins to join with V at temperatures above 1473K. At 1573K for 1.8 and 7.2ks, granular V_2C phase formed at the V side of the reaction zone, while the layer V_3Si phase is formed at the interface between V_2C and SiC. The same reaction structure can be observed at 1473 and 1673K for 1.8ks. Hexagonal V_5Si_3C_x phase was formed at the interface between V_3Si and SiC at 1573K for 14.4 and 21.6ks, and the interface structure of the joint became SiC/V_5Si_3C_x/V_3Si/V_2C+V/V. This complete diffusion path is correlated with the corresponding Si-V-C phase diagram. At the longer bonding time of 64.8ks, V was completely consumed, and the joint showed the layer structure of SiC/V_5Si_3C_x/V_3Si/V_2C/V_3Si/V_5Si_3C_x/SiC.

• 大阪大学の論文

著者

• Fukai T.

  Osaka University

• Naka M.

  Osaka University

• Schuster J.

  University Of Vienna

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