Synthesis of Boron Nitride Films by Microwave Plasma Chemical Vapor Deposition in Fluorine-Containing Gases : Surfaces, Interfaces, and Films

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概要

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• Boron nitride films were deposited on (001) silicon substrates by rf-or dc-bias-assisted microwave plasma chemical vapor deposition in a He-N_2-BF_3-H_2 gas system. Scanning electron microscopy, X-ray diffraction, and infrared and Raman spectroscopies were performed to characterize the films. The deposited films were composed of cubic boron nitride (cBN) and turbostratic and hexagonal boron nitrides with the cubic phase in the range of 50 to 70%. Raman measurements showed both transverse optical (TO) and longitudinal optical (LO) characteristic peaks of cBN. Although these peaks are very broad, this is believed to be the first reliable report on the appearance of clear Raman signals of cBN deposited by microwave plasma chemical vapor deposition.

• 社団法人応用物理学会の論文
• 2001-06-01

著者

• Zhang Wenjun

  Advanced Materials Laboratory National Institute For Materials Science

• Zhang Wangzhong

  The State Key Laboratory Of High Performance Ceramics And Superfinemicrostructure Shanghai Institute

• MATSUMOTO Seiichiro

  Advanced Materials Laboratory, National Institute for Materials Science

• Matsumoto Seiichiro

  Advanced Materials Laboratory National Institute For Materials Science

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• Synthesis of Boron Nitride Films by Microwave Plasma Chemical Vapor Deposition in Fluorine-Containing Gases : Surfaces, Interfaces, and Films

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