Hydrogenated Polycrystalline GaN Surface Light-Emitting Devices on Transparent Conductive Glass : Semiconductors

概要

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Electroluminescence (EL) from hydrogenated polycrystalline GaN surface light-emitting devices is reported for the first time. The devices consist of a simple sandwich-type cell of films grown at 380℃ on indium-tin-oxide coated glass and Al substrates with an Au electrode. Pale yellow EL is observed at room temperature in a lighted room at wavelengths ranging from 450 nm to 700 nm with a peak at 570 nm. Luminance is 7 cd/m^2 at an applied DC voltage of 7 V and a current of 35 mA.
社団法人応用物理学会の論文
2001-12-15