Dry Etching of Organic Low Dielectric Constant Film without Etch Stop Layer : Nuclear Science, Plasmas, and Electric Discharges

概要

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We investigated the trade-off between the increase of etch rate and the control of subtrenching in H_2/N_2 etching of a SiLK film (SiLK is a trademark of The Dow Chemical Company) without an etch stop layer for a Cu/low-k dual damascene structure. Based on our results, it is clear that the re-incident distribution of the reaction product influenced the mechanism of subtrenching strongly. As H etchant had the ability to remove the reaction product efficiently, we have successfully obtained good etching performance (an average etch rate of 128 nm/min, no subtrenching, and an etch rate uniformity of 8.9% within a 200 mm wafer) using an H_2 high-flow-rate process in order to increase the amount of H etchant.
社団法人応用物理学会の論文
2002-04-01