A Feasibility Study of 50 nm Resolution with Low Energy Electron Beam Proximity Projection Lithography : Instrumentation, Measurement, and Fabrication Technology

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概要

• 論文の詳細を見る

• Patterns of 50 nm lines and spaces were demonstrated by low energy electron beam proximity lithography using 47-nm-thick poly methyl methacrylate (PMMA) and stencil masks fabricated by achromatic interference lithography (AIL). The result indicates the validity of the resolution analysis previously reported and the resolution capabilities of low energy electron beam proximity projection lithography (LEEPL) as a 50 nm node technology.

• 社団法人応用物理学会の論文
• 2002-01-15

著者

• Yoshizawa M

  Sony Corp. Kanagawa Jpn

• YOSHIZAWA Masaki

  Research Laboratories of Electronics, Massachusetts Institute of Technology

• SAVAS T.

  Research Laboratories of Electronics, Massachusetts Institute of Technology

• Savas T.

  Research Laboratories Of Electronics Massachusetts Institute Of Technology

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• A Feasibility Study of 50 nm Resolution with Low Energy Electron Beam Proximity Projection Lithography : Instrumentation, Measurement, and Fabrication Technology

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