Microscopic mechanism of resistance-switching-memory device based on metal oxides

概要

論文の詳細を見る
Recently, the resistance switching in transition metal oxides has been attracting renewed interests because of its possible application to nonvolatile memory device. The relatively simple fabrication procedure compatible with the conventional semiconductor process is one of the strong merits of oxide-based resistance-changing random access memory (ReRAM). However, the basic mechanism of resistance switching is still not clear and it poses a big obstacle of the improving device performance. In this presentation, I am going to review recent experimental works on ReRAM and try to propose a microscopic model that can explain key features common to many ReRAM devices. Various experimental results indicate that the creation and migration of microscopic defects such as oxygen vacancies play an important role in stabilizing bi-resistance states. We will introduce a first-principles result which can explain the resistance switching based on the electromigration of the oxygen vacancy.
社団法人電子情報通信学会の論文
2007-06-18