Quantum-mechanical effects in nanometer scale MuGFETs (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))

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概要

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• Solving the Poisson and Schrodinger equations self-consistently in two-dimensions reveals quantum-mechanical effects that influence the electron concentration, the threshold voltage and the drain current in MuGFETs. The average electron concentration needed to reach the threshold voltage depends on the gate configurations and the device geometry. The dependence of the energy of the lowest subband on the different gate configurations is studied, and the relation between threshold voltage and the lowest subband energy is investigated. The reduced drain current due to the dynamic threshold voltage effect has been analyzed.

• 社団法人電子情報通信学会の論文
• 2007-06-18

著者

• Yun Se

  Dept. Of Electronics Engineering University Of Incheon

• Yu Chong

  Dept. of Electronics Engineering, University of Incheon

• Park Jong

  Dept. of Electronics Engineering, University of Incheon

• Colinge Jean

  Dept. of Electrical and Computer Engineering, University of California

• Yu Chong

  Dept. Of Electronics Engineering University Of Incheon

• Colinge Jean

  Dept. Of Electrical And Computer Engineering University Of California

• Park Jong

  Dept. Of Electronics Engineering University Of Incheon

関連論文

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