Tungsten Based Electrodes for Stacked Capacitor Ferroelectric Memories

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概要

• 論文の詳細を見る

• Fabrication of high-density ferroelectric memories requires the growth of the ferroelectric material on the drain contact metal. In standard 0.5 μm technology, tungsten plugs are applied to connect the drain contacts to the first metaltization levet. In this work. we investigated electrode systems to be applied between sputter deposited, ferroelectric PbZrO_<0.35>Ti_<0.65>O_3 (PZT) and tungsten. Besides the obvious barrier function of such an electrode system, the texture of the PZT is of interest as well. The roughness of chemical vapor deposition (CVD) of W layer before and after etch-hack by dry etching resulted in an increased leakage current of the ferroelectric capacitor. The problem could be solved by chemical mechanical polishing (CMP) of the tungsten film.

• 社団法人応用物理学会の論文
• 2002-11-30

著者

• Muralt P.

  Ceramics Laboratory Swiss Federal Institute Of Technology Epfl

• TRUPINA L.

  Ceramics Laboratory, Swiss Federal Institute of Technology EPFL

• BABOROWSKI J.

  Ceramics Laboratory, Swiss Federal Institute of Technology EPFL

• MEYER V.

  General Electronics Laboratory Swiss Federal Institute of Technology EPFL

• BOUVET D.

  General Electronics Laboratory Swiss Federal Institute of Technology EPFL

• FAZAN P.

  General Electronics Laboratory Swiss Federal Institute of Technology EPFL

• LOBET M.

  Microelectronics Mann, Swatch Group

• Lobet M.

  Microelectronics Mann Swatch Group

• Trupina L.

  Ceramics Laboratory Swiss Federal Institute Of Technology Epfl

• Baborowski J.

  Ceramics Laboratory Swiss Federal Institute Of Technology Epfl

関連論文

• Tungsten Based Electrodes for Stacked Capacitor Ferroelectric Memories

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