Electrical Properties of Epitaxial (Pb,Sr)TiO_3 Thin Films Prepared by RF Magnetron Sputtering

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概要

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• (Pb,Sr)TiO_3 (PST) thin films were prepared by rf magnetron sputtering using a multi-element target on (111)Ir/SiO_2/Si, (l00)SrTiO_3:La and (100)Ir/(l00)SrTiO_3 substrates. Polycrystalline films were obtained on the (l11)Ir/SiO_2/Si substrate and epitaxial thin films were obtained on (100)SrTiO_3:La and (l00)Ir/(l00)SrTiO_3 substrates. Their dielectric properties were measured with and without DC bias field. The electric field dependence of the dielectric constant with a value of 70% was measured under a bias of 200kV/cm at room temperature from the epitaxial thin films.

• 社団法人応用物理学会の論文
• 2002-11-30

著者

• Karaki Tomoaki

  Deportment Of Electronics And Informarics Faculty Of Engineering Toyania Prefectural University

• Adachi Masatoshi

  Deportment Of Electronics And Informarics Faculty Of Engineering Toyania Prefectural University

• Du Jing

  Deportment Of Electronics And Informarics Faculty Of Engineering Toyania Prefectural University

• FUJI Tadashi

  Deportment of Electronics and Informarics, Faculty of Engineering, Toyania Prefectural University

• Fuji Tadashi

  Deportment Of Electronics And Informarics Faculty Of Engineering Toyania Prefectural University

• Fujii Tadashi

  Deportment of Electronics and Informarics, Faculty of Engineering, Toyania Prefectural University

関連論文

• Electrical Properties of Epitaxial (Pb,Sr)TiO_3 Thin Films Prepared by RF Magnetron Sputtering

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