Effect of Rapid Thermal Annealing on the Properties of Pb(Zr, Ti)O_3 Thin Films Made by Low-Temperature Metal-Organic Chemical Vapor Deposition

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Pb(Zr, Ti)Os (PZT) films with stoichiometric composition were prepared by the new method of the combination of low-temperature metal-organic chemical vapor depositon (MOCVD) and rapid thermal annealing (RTA) and the effect of RTA on the structural and electrical properties of PZT thin films was investigated. As the RTA time increased, the loss of Pb increased. However, after the RTA process, the PZT films had a condensed and fine-grain microstructure and a single perovskite phase at 800℃ annealing temperature and annealing time of 30s. For the film crystallized by the RTA process, the remanent polarization (2 P_r) was about 15 μC/cm^2 with an applied voltage of 5 V in P-E hysteresis loops and the films had a dielectric constant of 475 in the capacitance-voltage curve. Leakage-current densities of PZT films were about 9.6 × 10^<-5> A/cm^2 and 5.0 × 10^<-5> A/cm^2 at +5V and -5 V, respectively.
社団法人応用物理学会の論文
2002-11-30