The 4.5 kV Press Pack Injection Enhanced Gate Transistor with Current Sense Function

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概要

• 論文の詳細を見る

• This paper presents the 4.5 kV trench gate injection enhanced gate transistor (IEGT) with a current sense function that realizes short-circuit withstanding capability without suffering from low on-state voltage drop. We propose a new concept of the press pack IEGT with the current sense function. In the press pack IEGT with the current sense function, 20 IEGT chips are connected in parallel inside the package, and its collector current can be controlled under short-circuit condition.

• 社団法人応用物理学会の論文
• 2002-11-15

著者

• Kitagawa Mitsuhiko

  Microelectronics Center Toshiba Corporation

• KON Hironobu

  Power Electronics Development & Designing Group, Toshiba Corporation Social Infrastructure Systems C

• Kon Hironobu

  Power Electronics Development & Designing Group Toshiba Corporation Social Infrastructure System

関連論文

• The 4.5 kV Press Pack Injection Enhanced Gate Transistor with Current Sense Function

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