Charge Compensation in Lead Tungstate Crystals Doped with Aliovalent Ion

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概要

• 論文の詳細を見る

• We have previously reported a second dielectric relaxation ascribed to [2Re_<pb>-O_i] in Re-doped PbWO4 (Re = La, Y) after annealing at 750℃. Further investigations by X-ray photoelectron spectroscopy (XPS) and extended X-ray absorption fine structure (EXAFS) have been performed in heterovalent-ion-doped PWO before and after annealing at 850℃. The existence of interstitial oxygen in the Re:PWO is confirmed after annealing in air at high temperature. Heavy doping with trivalent/tetravalent ion will induce interstitial oxygen ion in the scheelite PWO for charge compensation. Based on the experimental results, we constrct a hypothesis to clarify the mechanism of doping at different concentrations and estimate the lead deficiency in as-grown PWO to be around tens at.ppm.

• 社団法人応用物理学会の論文
• 2002-10-15

著者

• KOBAYASHI M.

  KEK, High Energy Accelerator Research Organization

• Usuki Y.

  Furukawa Co.

• ZHU W.

  The State Key Laboratory of High Performance Ceramics and Supe dine Microstructure, Shanghai institu

• FENG X.

  The State Key Laboratory of High Performance Ceramics and Supe dine Microstructure, Shanghai institu

• WU Z.

  Beijing Synchrotron Radiation Laboratory, Institute of High Energy Physics, Chinese Academy of Scien

• Wu Z.

  Beijing Synchrotron Radiation Laboratory Institute Of High Energy Physics Chinese Academy Of Science

関連論文

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• Charge Compensation in Lead Tungstate Crystals Doped with Aliovalent Ion
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• A permanent magnet to search for long-lived π+π- atoms : Received May 25, 2012

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