Electron Transmission through an Insulator Layer with Randomly Distributed Magnetic Impurities in Ferromagnet-Insulator-Ferromagnet Junctions

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概要

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• We investigate the effects of magnetic impurities in the insulator layer on tunnel magnetoresistance (TMR) of ferromagnet-insulator-ferromagnet junctions. The magnetic impurities are randomly distributed in the insulator layer. From a tight-binding Hamiltonian the conductance and TMR ratio are calculated. It is found that the polarization of magnetic impurities has a crucial effect on the TMR ratio. If the average polarization is zero, the TMR ratio is reduced with increasing impurity concentration, due to the spin-flip scattering. If the average polarization is non-zero, the TMR ratio may increase or change its sign with increasing impurity concentration. The obtained results are in good agreement with recent experiments.

• 社団法人応用物理学会の論文
• 2002-07-15

著者

• Xiong Shi-jie

  National Laboratory Of Solid State Microstructures And Department Of Physics Nanjing University

• Yao Yeong-der

  National Laboratory Of Solid State Microstructures And Department Of Physics Nanjing University

関連論文

• Electron Transmission through an Insulator Layer with Randomly Distributed Magnetic Impurities in Ferromagnet-Insulator-Ferromagnet Junctions

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