Image Formation by Dynamic Exposure with Multispot Beam in X-Ray Nanolithography

スポンサーリンク

概要

• 論文の詳細を見る

• We propose here a new method in X-ray nanolithography. Using this method, two-dimensional patterns with a linewidth of 25 nm can be formed. A conventional proximity X-ray lithography system is applicable to the method with a practical gap of approximately 8 μm. A 2X mask is used in the method instead of a 1X mask, changing the mask-wafer position (not gap) during exposure. The mask forms multispot images on the wafer; thus the traces of the relative change of the mask-wafer position during exposure ('dynamic exposure') produce a periodic pattern. The image formability and operational productivity for three kinds of 2X masks proposed for application to this method are described.

• 社団法人応用物理学会の論文
• 2002-06-30

著者

• Washio M

  Advanced Research Institute For Science And Engineering Waseda University

• Washio Masakazu

  Advanced Research Institute For Science And Engineering Waseda University

• Toyota Eijiro

  Advanced Research Institute For Science And Engineering Waseda University

関連論文

• Bunch Length Monitor Using Two-Frequency Analysis for RF Gun System
• Image Formation by Dynamic Exposure with Multispot Beam in X-Ray Nanolithography

スポンサーリンク