Influence of Silicon on Insulator Wafer Stress Properties on Placement Accuracy of Stencil Masks

概要

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The issue of placement control is one of the key challenges of stencil mask technology. A high placement accuracy can only be achieved with a precise control of mechanical stress on a global and local scale. For this reason, the stress properties of the mask blank material -typically silicon on insulator (SOI) wafers- have to be known and adjusted properly. A systematic investigation of initial stress properties of various 501 materials is presented. The study covers bonded and non-bonded wafers and demonstrates a global membrane stress accuracy of 0.1 MPa. Initial SOL-stress properties on a global and local scale are discussed. With the precise control of layer stress and pattern correction methods based on finite-element calculations, a placement accuracy of 12 nm (3σ) is achieved. A sample-to-sample error of 12 nm (3σ) indicates the high stress-uniformity of non-bonded material.
社団法人応用物理学会の論文
2002-06-30