Effect of Silane Flowing Time on W Volcano and Plug Formation

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概要

• 論文の詳細を見る

• W volcano is one of the defects in semiconductor devices. The presence of defects causes metal line bridges and thus device malfunction. The decomposition of SiH_4 gas into Si atoms as nucleation sites is crucial for W film deposition. Here, we investigate the phenomenon in which the flowing time of SiH_4 gas appears to dominate both W volcano formation and the degree of W film filling in a hole; the density of W volcanoes is increased with an increase of SiH_4 flowing time. The volcanofree process and step-coverage of a W plug with various SiH_4 flowing times are evaluated, and a formation mechanism is also proposed.

• 社団法人応用物理学会の論文
• 2002-05-15

著者

• Kuo Cheng

  National Chiao Tung University

• Chang Hui

  National Chiao Tung University

• Juang Fung

  Silicon Integrated Systems Corporation

関連論文

• English Education in Taiwan : From Elementary to University Level(2)(English Education at the Tertiary Level-in Search of a Consistent Curriculum from Elementary School through University)
• Student-Centeredness : A Dynamic Syllabus in an EAP Classroom(invited lecture,Tomorrow's Learners, Tomorrow's Teachers : Autonomous Development in College English Language Learning and Teaching)
• Effect of Silane Flowing Time on W Volcano and Plug Formation

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