In situ Ellipsometric Measurement during Growth of Ge on Si(111) by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-04-15
著者
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Umeno Masataka
Material And Life Science Engineering Graduate School Of Engineering Osaka University
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Ikuta Tetsuya
Material And Life Science Engineering Graduate School Of Engineering Osaka University
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Kamei Satoshi
Material And Life Science Engineering Graduate School Of Engineering Osaka University
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YOSHIOKA Yoshifumi
Material and Life Science Engineering, Graduate School of Engineering, Osaka University
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HAYASHI Hiroyuki
Material and Life Science Engineering, Graduate School of Engineering, Osaka University
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SHIMURA Takayoshi
Material and Life Science Engineering, Graduate School of Engineering, Osaka University
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Shimura T
Material And Life Science Engineering Graduate School Of Engineering Osaka University
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Yoshioka Yoshifumi
Material And Life Science Engineering Graduate School Of Engineering Osaka University
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Hayashi Hiroyuki
Material And Life Science Engineering Graduate School Of Engineering Osaka University
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Shimura Takayoshi
Material and Life Science Engineering, Faculty of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
関連論文
- In situ Ellipsometric Measurement during Growth of Ge on Si(111) by Molecular Beam Epitaxy
- Monitoring of Si Molecular-Beam Epitaxial Growth by an Ellipsometric Method