Hydrogen Implantation Damage in Polycrystalline Silicon Thin Film Transistors Caused by Ion Doping
スポンサーリンク
概要
- 論文の詳細を見る
- 2002-03-15
著者
-
Furuta Mamoru
Display Devices Company Lcd Business Group Matsushita Electric Industrial Co. Ltd.
-
Furuta Mamoru
Display Technology Research Laboratory Matsushita Electric Industrial Co. Ltd.
-
SATANI Hiroshi
Display Devices Development Center, Matsushita Electric Industrial Co., Ltd.
-
TERASHITA Toshiaki
Display Devices Company, LCD Business Group, Matsushita Electric Industrial Co., Ltd.
-
TAMURA Tatsuhiko
Display Devices Company, LCD Business Group, Matsushita Electric Industrial Co., Ltd.
-
TSUCHIHASHI Yuji
Display Devices Company, LCD Business Group, Matsushita Electric Industrial Co., Ltd.
-
Satani Hiroshi
Display Devices Development Center Matsushita Electric Industrial Co. Ltd.
-
Tamura T
Display Devices Company Lcd Business Group Matsushita Electric Industrial Co. Ltd.
-
Tsuchihashi Yuji
Display Devices Company Lcd Business Group Matsushita Electric Industrial Co. Ltd.
-
Terashita Toshiaki
Display Devices Company Lcd Business Group Matsushita Electric Industrial Co. Ltd.
関連論文
- Hydrogen Implantation Damage in Polycrystalline Silicon Thin Film Transistors Caused by Ion Doping
- Low-Temperature Polycrystalline Silicon Thin-Film Transistors for Large-Area Liquid Crystal Display