Elementary Processes of Si(001) Etching by Atomic Hydrogen
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概要
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The mechanism of Si(001) etching by atomic hydrogen was analyzed using quantum chemical calculations based on the cluster model. In cases where an atomic hydrogen approached a surface dihydride Si that had two Si-H bonds and two Si-Si back-bonds, one of the Si-Si back-bonds was shown to be broken as soon as a new Si-H bond was formed. As a result, trihydride Si was formed. It was shown that the remaining Si-Si back-bond was also broken by further attack of atomic hydrogen, and that the desorption of SiH_4 occurred. The activation energies for these reactions were estimated to be 〜0.4eV; therefore, these reactions were considered to occur easily at room temperature. Cluster size dependence was investigated. No notable discrepancies in the activation energies were observed between clusters. The abstraction reaction of H_2 and the exchange reaction of H were also analyzed. [DOI: 10.1143/JJAP.41.784]
- 社団法人応用物理学会の論文
- 2002-02-15