Increased Thermal Stability of W/Ta_2O_5 Gate Structure Using Effective Diffusion Barrier of Denuded Tungsten Nitride : Semiconductors

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2001-08-15

著者

• Sohn Dong

  Applied Materials Korea

• Cho Ihl

  System Ic R&d Division Hynix Semiconductor Inc.

• PARK Ji-Soo

  System IC R&D Division, Hynix Semiconductor Inc.

• HA Jae

  System IC R&D Division, Hynix Semiconductor Inc.

• Ha Jae

  System Ic R&d Division Hynix Semiconductor Inc.

• Park Ji-soo

  System Ic R&d Division Hynix Semiconductor Inc.

関連論文

• Increased Thermal Stability of W/Ta_2O_5 Gate Structure Using Effective Diffusion Barrier of Denuded Tungsten Nitride : Semiconductors

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