Electrochemical deposition of InSx thin film by periodic pulse-form biasing and its characterization (電子デバイス)

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概要

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• In this study, indium sulfide oxide (InS_xO_y) was deposited onto ITO coated glass substrate by electrochemical deposition (ECD) from an aqueous solution. InS_xO_y is suitable as a window layer in solar cells. The deposition bath contained In_2(SO_4)_3 and Na_2S_2O_3. We first optimized the pulse-form biasing for ECD by characterizing deposited samples with scanning electron microscope (SEM), Auger electron spectroscopy (AES) and optical transmission measurements. Furthermore, we observed the photosensitivity of the films by means of photoelectrochemical (PEC) measurements. From these results, we confirmed that the indium sulfide thin films show n-type conduction. We also found that the optical band gap is varied significantly by changing the deposition pulse form.

• 一般社団法人電子情報通信学会の論文
• 2007-05-17

著者

• Ichimura M.

  Department Of Engineering Physics Electronics And Mechanics Nagoya Institute Of Technology

• Haleem A.M.

  Department of Engineering Physics, Electronics and Mechanics, Nagoya Institute of Technology:(Present Office)Dept. Engineering Physics, Faculty of Engineering, Fayoum University

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• Electrochemical deposition of InSx thin film by periodic pulse-form biasing and its characterization (電子部品・材料)
• Electrochemical deposition of InSx thin film by periodic pulse-form biasing and its characterization (電子デバイス)

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