ナノクラスタ物質あるいは従来半導体の同位原子依存性

概要

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We examined single crystal growth of isotope modified β-rhombohedral boron in order to investigate isotopic composition dependence of electrical transport properties. We adopted a zone refining technique by arc melt. After the melting, the obtained crystals were provided to macroscopic evaluation with SEM and impurity detection by EPMA. It was found that the obtained crystals contain Cu as an impurity clement from which seems to be originated Cu cast. A reasonable measurement for evaluation of isotope effect of electrical properties will be made enough, so long as concentration of impurities is quantitatively constant in all isotope crystals. On the other hand, computational calculation of Becke's 3 parameter hybrid method using the LYP correlation functional (B3LYP) have been performed on (B_<12>H_<12>)^2 dodecaborane anions with different boron isotopic compositions in order to investigate isotopic dependence of vibrational spectral properties of B_<12> icosahedra, and for comparison optical vibrational properties of the icosahedral molecule with the characteristics of inter or intra-icosahedral optical phonon vibrational modes in boron-rich crystals. We also evaluated an expression of the estimate of the band gap of isotope controlled Si based on the electron-lattice interaction.
近畿大学工業高等専門学校の論文
2005-12-01