半導体基板上に成長する絶縁膜の成長様式と表面形態
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概要
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We have investigated the growth mode and surface morphology of CaF_2 film on Si (111) 7×7 substrate by reflection high-energy electron diffraction (RHEED) using very weak electron beam and atomic force microscopy (AFM). It was found by RHEED intensity oscillation measurements and AFM observations that three-dimensional (3D) islands grow at RT, however, rather flat surface appears with 2D islands around 300℃. Especially, at high temperature of 700℃, characteristic equilateral triangular terraces (or islands) with flat and wide shape grow with the tops directed toward [11-2] of substrate Si (111). On the other hand, desorption process of the CaF_2 film due to electron stimulated desorption (BSD) was also examined. It was found that the ESD process at 300℃ forms characteristic equilateral triangular craters on the film surface with the tops (or corners) directed toward [-1-12] of substrate Si (111), provided that the film was grown at 700℃. In addition, solid phase epitaxy of CaF_2 film on Si (001) 2×1 substrate has been investigated and CaF_2 (110) growth was observed at the interface.
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