New Current-Mirror Sense Amplifier Design for High-Speed SRAM Applications(<Special Section> Analog Circuit Techniques and Related Topics)

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概要

• 論文の詳細を見る

• This study presents a new current-mirror sense amplifier (CMSA) design for high-speed static random access memory (SRAM) applications. The proposed CMSA can directly sense the current of memory cell and only needs two transistor stages cascaded from V_<DD> to GND for achieving the low-voltage operation. Moreover, the sensing speed of the proposed CMSA is independent of the bit-line capacitances and is only slightly sensitive to the data-line capacitances. Based on the simulation with using the TSMC 0.25-μm 2P4M CMOS process parameter, the proposed CMSA can effectively work at 500MHz-1 GHz with working voltage as low as 1.5V. Simulated results show that the proposed CMSA has a much speed improvement compared with the conventional sense amplifiers. Also, the effectiveness of the proposed CMSA is demonstrated with a read-cycle-only memory system to show the good performance for SRAM applications.

• 社団法人電子情報通信学会の論文
• 2006-02-01

著者

• Hsu Chun-lung

  The Department Of Electrical Engineering National Dong Hwa University

• Ho Mean-hom

  The Department Of Electrical Engineering National Dong Hwa University

• LIN Chin-Feng

  the Department of Electrical Engineering, National Dong Hwa University

• Lin Chin-feng

  The Department Of Electrical Engineering National Dong Hwa University

関連論文

• New Current-Mirror Sense Amplifier Design for High-Speed SRAM Applications( Analog Circuit Techniques and Related Topics)

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