システムインディスプレイ用高性能ショットキー両極性型TFTの開発
スポンサーリンク
概要
- 論文の詳細を見る
High performance Schottky ambipolar thin-film transistors (TFTs) were fabricated by using NiSi and laser-annealed poly-Si as the Schottky source/drain (S/D) contacts and the active layers, respectively. The TFTs showed good operation characteristics with I_on/I_off of 〜 10^5 for both the p-channel and n-channel modes. Moreover, the kink effect due to the floating body effects, which were observed in the conventional doping S/D TFTs, was successfully suppressed.
- 九州大学の論文