同時スパッタ法で形成した鉄シリサイド薄膜抵抗の構造と電気的特性
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概要
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The electrical and structural properties of cosputtered Fe-Si films are investigated in the composition range from 48 to 68 at.%Si. The values of sheet resistance and TCR for the 1000Å thick films are 20Ω～30KΩ and +200～-4000ppm/℃, respectively, depending on the compositions. Especially, zero TCR film is formed at a composition of 54 at.%Si, and the film structure is considered to consist of particles of FeSi_2 (negative TCR) in a matrix of FeSi (positive TCR). The values of thermoelectric power of the films are as less as the values of Ta_2N films. The resistivity and TCR of the films are independent of film thickness, therefore the sheet resistance of the films with zero TCR can be increased by reducing film thickness. The surfaces of the films were relatively smooth.
- 長岡工業高等専門学校の論文
- 2004-03-30
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